CMPA801B025 订货13632767652黄小姐微信同号】
CMPA801B025 产品介绍CMPA801B025报价CMPA801B025代理CMPA801B025咨询***CMPA801B025现货CMPA801B025
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron MobilityTransistor (HEMT) based monolithic microw***e integrated circuit (MMIC).GaN has superior properties compared to silicon or gallium arsenide, includinghigher breakdown voltage, higher saturated electron drift velocity and higherthermal conductivity. GaN HEMTs also offer greater power density and widerbandwidths compared to Si and GaAs transistors. This MMIC is ***ailable ina 10-lead metal/ceramic flanged package (CMPA801B025F) or ***all formfactorpill package (CMPA801B025P) for optimal electrical and thermal performance.
CIEE的CMPA801B025是氮化***（GaN）高电子迁移率。
基于晶体管（HEMT）的单片微波集成电路（MMIC）。
与硅或***化***相比，GaN具有优异的性能，包括
击穿电压越高，饱和电子漂移速度越高
热导率。GaN HEMT还提供更大的功率密度和更宽的功率密度。
与Si和GaAs晶体管相比的带宽。此MMIC可供使用。
10引线金属/陶瓷法兰封装（CMPA801B025F）或小形状因数
药丸包装（CMPA801B025P），以获得***佳的电性能和热性能。