Qorvo's QPA1010D is an X-band high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1010D operates from 7.9 - 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
QPA1010D can also support a variety of operating conditi*** to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operati***.
The QPA1010D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite communication and data links, as well as, military and commercial radar systems.
The QPA1010D is 100% DC and RF tested on-wafer to ensure compliance to electrical specificati***.
Lead-free and RoHS compliant.
Evaluation boa*** are ***ailable upon request.
QoVo公司的QPA1010D是一种X波段高功率MMIC放大器，是在QoVo公司生产的0.15M GaN SiC工艺（QGAN15）上制造的。QPA1010D工作在7.9～11 GHz，典型地提供15 W饱和输出功率，功率增加效率为38%，大信号增益为18分贝。宽带性能的这种组合提供了设计者正在寻找的灵活性，以改善系统性能，同时减小尺寸和成本。
QPA1010D还可以支持多种操作条件，以***佳支持系统要求。具有良好的热性能，它可以支持一定范围的偏置电压，并且在CW和脉冲操作下都能很好地工作。
QPA1010D与50欧姆匹配，集成了两个RF I/O端口的直流阻断电容，简化了系统集成。宽带性能和操作灵活性允许它支持***通信和数据链路，以及军事和商业雷达系统。
QPA1010D是100%直流和RF测试在晶圆上，以确保符合电气规范。
无铅和符合RoHS标准。
评估板可根据要求提供。
QPA1010DKey Features
- Frequency Range: 7.9 - 11 GHz
- POUT: 42 dBm at PIN = 24 dBm
- PAE: 38 % at PIN = 24 dBm
- Large Signal Gain: 18 dB at PIN = 24 dBm
- ***all Signal Gain: 25 dB
- Integrated Power Detector
- Bias: VD = 24 V, IDQ = 600 mA, VG = -1.9 V Typical
- Pulsed VD: PW = 100 us, DC = 10%
- Chip Dimensi***: 2.75 x 1.65 x 0.10 mm