氮化***厚膜晶片
2”GaN Templates
性能参数Specificati***:
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产品型号Item |
GaN-T-N |
GaN-T-S |
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尺寸Dimensi*** |
Ф 2” |
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厚度Thickness |
15 µm, 20 µm, 30 µm, 40 µm |
30 µm, 90 µm |
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晶体取向Orientation |
C-axis(0001) &plu***n; 1° |
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导电类型Conduction Type |
N-type |
Semi-Insulating |
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电阻率Resistivity(300K) |
< 0.05 Ω·cm |
﹥106 Ω·cm |
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位错密度Dislocation Density |
Less than 1x108 cm-2 |
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衬底结构Substrate structure |
Thick GaN on Sapphire(0001) |
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有效面积Useable Surface Area |
> 90% |
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抛光Polishing |
Standard: SSP Option: DSP |
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包装Package |
Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
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2英寸氮化***自支撑晶片
2”Free-Standing GaN Substrates
性能参数Specificati***:
|
产品型号Item |
GaN-FS-N |
GaN-FS-SI |
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尺寸Dimensi*** |
Ф 50.8mm &plu***n; 1mm |
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厚度Thickness |
300 &plu***n; 25 µm |
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晶体取向Orientation |
C-axis(0001) &plu***n; 0.5° |
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主***边Orientation Flat |
(1-100) &plu***n; 0.5°, 16.0 &plu***n; 1.0mm |
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次***边Secondary Orientation Flat |
(11-20) &plu***n; 3°, 8.0 &plu***n; 1.0mm |
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TTV(Total Thickness Variation) |
≤15 µm |
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弯曲度BOW |
≤20 µm |
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导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106 Ω·cm |
|
位错密度Dislocation Density |
Less than 5x106 cm-2 |
|
|
有效面积Useable Surface Area |
> 90% |
|
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
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|
包装Package |
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
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定制尺寸氮化***自支撑晶片
Free-standing GaN Substrates (Customized size)
性能参数Specificati***:
|
产品型号Item |
GaN-FS-10 |
GaN-FS-15 |
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尺寸Dimensi*** |
10.0mm×10.5mm |
14.0mm×15.0mm |
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厚度Thickness |
Rank 300 |
300 &plu***n; 25 µm |
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Rank 350 |
350 &plu***n; 25 µm |
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Rank 400 |
400 &plu***n; 25 µm |
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晶体取向Orientation |
C-axis(0001) &plu***n; 0.5° |
|
|
TTV(Total Thickness Variation) |
≤15 µm |
|
|
弯曲度BOW |
≤20 µm |
|
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106 Ω·cm |
|
位错密度Dislocation Density |
Less than 5x106 cm-2 |
|
|
有效面积Useable Surface Area |
> 90% |
|
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
|
|
包装Package |
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
|
*5.0 mm * 5.5 mm is ***ailable and other size can be customized.
性能参数Specificati***:
|
产品型号Item |
GaN-FS-N-1.5 |
|||
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尺寸Dimensi*** |
Ф 25.4mm &plu***n; 0.5mm |
Ф 38.1mm &plu***n; 0.5mm |
Ф 40.0mm &plu***n; 0.5mm |
Ф 45.0mm &plu***n; 0.5mm |
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厚度Thickness |
300 &plu***n; 25 µm |
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晶体取向Orientation |
C-axis(0001) &plu***n; 0.5° |
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主***边Orientation Flat |
(1-100) &plu***n; 0.5° 8 &plu***n; 1mm |
(1-100) &plu***n; 0.5° 12 &plu***n; 1mm |
(1-100) &plu***n; 0.5° 14 &plu***n; 1mm |
(1-100) &plu***n; 0.5° 14 &plu***n; 1mm |
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次***边Secondary Orientation Flat |
(11-20) &plu***n; 3° 4 &plu***n; 1mm |
(11-20) &plu***n; 3° 6 &plu***n; 1mm |
(11-20) &plu***n; 3° 7 &plu***n; 1mm |
(11-20) &plu***n; 3° 7 &plu***n; 1mm |
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TTV(Total Thickness Variation) |
≤15 µm |
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弯曲度BOW |
≤20 µm |
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导电类型Conduction Type |
N-type |
Semi-Insulating |
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