| 品牌 | 华晶 | 型号 | CS1N60C1H |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 封装外形 | ***D(SO)/表面封装 |
| 材料 | N-FET硅N沟道 | 开启电压 | 600（V） |
| 夹断电压 | 30（V） | 跨导 | 1（μS） |
| 极间电容 | 1（pF） | 低频噪声系数 | 1（dB） |
| ***大漏极电流 | 1000（mA） | ***大耗散功率 | 3（mW） |
General Description：
VDSS
600V
ID
1A
PD (TC=25℃)
3W
***(ON)
9Ω
CS1N60C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the ***alanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form isTO-92, which acco*** with the RoHS standard.
Features：
z Fast Switching
z Low ON Resistance(***on≤15Ω)
z Low Gate Charge (Typical Data:5.0nC)
z Low Reverse transfer capacitances(Typical:2.7pF)
z 100% Single Pulse ***alanche energy Test