| 品牌 | 华晶 | 型号 | CS2N10A23 |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 封装外形 | ***D(SO)/表面封装 |
| 材料 | N-FET硅N沟道 | 开启电压 | 100（V） |
| 夹断电压 | 1（V） | 跨导 | 1（μS） |
| 极间电容 | 1（pF） | 低频噪声系数 | 1（dB） |
| ***大漏极电流 | 1500（mA） | ***大耗散功率 | 3.1（mW） |
General Description：
VDSS 100 V
ID 1.5 A
PD(TC=25℃) 3.1 W
***(ON)(Max) 0.54 Ω
CS2N10A23, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the ***alanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOT-223,
which acco*** with the RoHS standard.
Features：
z Fast Switching
z Low Gate Charge (Typical Data: 7nC)
z Low Reverse transfer capacitances(Typical: 25pF)
z 100% Single Pulse ***alanche energy Test