| 品牌 | 华晶 | 型号 | CS100N03A8H |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 封装外形 | P-DIT/塑料双列直插 |
| 材料 | N-FET硅N沟道 | 开启电压 | 25（V） |
| 夹断电压 | 1（V） | 跨导 | 1（μS） |
| 极间电容 | 1（pF） | 低频噪声系数 | 1（dB） |
| ***大漏极电流 | 100A（mA） | ***大耗散功率 | 1（mW） |
General Description：
CS100N03A8H
VDSS 25 V
ID 100 A
PD(TC=25℃) 80 W
***(ON) 6.8 mΩ
the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the ***alanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which acco*** with the RoHS standard.
Features：
z TrenchFET Power MOSFET
z Low ON Resistance(***on≤8mΩ)
z Low Gate Charge (Typical Data:17nC)
z Low Reverse transfer capacitances(Typical:70pF)
z 100% Single Pulse ***alanche energy Test