| 品牌 | 华晶 | 型号 | 214BA3HD |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 用途 | TUN/调谐 |
| 封装外形 | ***D(SO)/表面封装 | 材料 | N-FET硅N沟道 |
| 开启电压 | 250（V） | 夹断电压 | 20（V） |
| 跨导 | 10（μS） | 极间电容 | 10（pF） |
| 低频噪声系数 | 1（dB） | ***大漏极电流 | 3（mA） |
| ***大耗散功率 | 30（mW） |
General Description：
VDSS=250V
ID=3.0A
PD(TC=25℃)=30W
***(ON)=1.0Ω
IRFU214B A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the ***alanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which acco*** with the RoHS standard.
Features：
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data: 8.0nC)
z Low Reverse transfer capacitances(Typical: 8pF)
z 100% Single Pulse ***alanche energy Test