| 品牌 | 华晶 | 型号 | CS9N90ANHD |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 用途 | L/功率放大 |
| 封装外形 | ***D(SO)/表面封装 | 材料 | N-FET硅N沟道 |
| 开启电压 | 900（V） | 夹断电压 | 1（V） |
| 跨导 | 1（μS） | 极间电容 | 1（pF） |
| 低频噪声系数 | 1（dB） | ***大漏极电流 | 9000（mA） |
| ***大耗散功率 | 150000（mW） |
General Description：
VDSS=900V
ID=9A
PD(TC=25℃)=150W
***(ON)=1.3Ω
CS9N90ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the ***alanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PN, which acco*** with the RoHS standard.
Features：
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data: 65nC)
z Low Reverse transfer capacitances(Typical: 13pF)
z 100% Single Pulse ***alanche energy Test