| 品牌 | 华晶 | 型号 | CS730A8H |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 用途 | SW-REG/开关电源 |
| 封装外形 | ***D(SO)/表面封装 | 材料 | N-FET硅N沟道 |
注：网上报价不作为成交依据，如需报价及***新单页资料，请联系。
General Description：
VDSS=400V
ID=6A
PD(TC=25℃)=75W
***(ON)=0.88Ω
CS730A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the ***alanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form isTO-220AB, which acco*** with the RoHS standard.
Features：
z Fast Switching
z Low ON Resistance(***on≤1Ω)
z Low Gate Charge (Typical Data:17nC)
z Low Reverse transfer capacitances(Typical:8.3pF)
z 100% Single Pulse ***alanche energy Test