|
Features |
|
7A,600V,***(on)(Max 1.2)@VGS=10V
Ultra-low Gate Charge(Typical 29nC)
Fast Switching Capability
100%***alanche Tested
Isolation Voltage(VISO=4000V AC)
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,h***e a high
rugged ***alanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast,high efficiency switched mode power
supplies, active power factor correction.
|
|
|
|
Parameters |
|
Symbol
|
Parameter
|
Value
|
Units
|
|
VDSS
|
Drain Source Voltage
|
600
|
V
|
|
ID
|
Continuous Drain Current(@Tc=25℃)
|
7
|
A
|
|
Continuous Drain Current(@Tc=100℃)
|
4.1
|
A
|
|
IDM
|
Drain Current Pulsed (Note1)
|
26
|
A
|
|
VGS
|
Gate to Source Voltage
|
&plu***n;30
|
V
|
|
EAS
|
Single Pulsed ***alanche Energy (Note2)
|
240
|
mJ
|
|
EAR
|
Repetitive ***alanche Energy (Note1)
|
15
|
mJ
|
|
dv/dt
|
Peak Diode Recovery dv /dt (Note3)
|
4.5
|
V/ ns
|
|
PD
|
Total Power Dissipation(@Tc=25℃)
|
142
|
W
|
|
Derating Factor above 25℃
|
1.14
|
W/℃
|
|
TJ,Tstg
|
Junction and Storage Temperature
|
-55~150
|
℃
|
|
TL
|
Channel Temperature
|
300
|
℃
|
|
我司常备原装现货，质量保证，价格优势，欢迎咨询洽谈！！
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深圳市信泰瑞达科技有限公司/廖立斌
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