【XP151A13A0MR】功率MOSFET
[英文版]
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby s***ing energy.
In order to counter static, a gate protect diode is built-in.
The ***all SOT-23 package makes high density mounting possible.
XP151A13A0MR
FEATURES：
Low On-State Resistance : ***(on) = 0.1Ω@ Vgs = 4.5V；***(on) = 0.14Ω@ Vgs = 2.5V；***(on) = 0.25Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
***all Package : SOT-23
XP151A13A0MR
特点：
低导通状态抵抗:***(on) = 0.1Ω@ Vgs = 4.5V;***(on) = 0.14Ω@ Vgs = 2.5V;***(on) = 0.25Ω@ Vgs = 1.5V
超高速开关
门内置保护二极管
驱动电压 :1.5V
N-Channel功率MOSFET
DMOS结构
封装 :SOT-23
功率MOSFET
XP15系列 超高速开关用MOS FET
XP15X系列采用微功率型模压SOT-23，是能够高密度安装的功率MOS FET。
输出形式有单N沟道型和单P沟道型。
XP15系列：
XP151A11BOMR-G
XP151A12A2MR-G
XP151A13AOMR-G
XP152A11E5MR-G
XP152A12COMR-G
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