XP151A13AOMR不仅在用途上更加广泛，在功能更加多样化，同时采用***新的集成化技术成果，集更多跟能为一体，沿来使用一颗器件将替代传统多颗器件的效果，极大的节约内部空间，在线路设计上，也更加简洁。也发挥出了高品质的特点，获得上万家企业的一直认可和推荐，作为提高配置的基础性配件，今天在进一步改进工艺和生产的基础上，更进一步超越了品质保证的要求，作为2013年特瑞仕***推荐的又产品，不仅经过一系列的产品体系认证，同时在众多企业的实际应用中
XP151A13AOMR
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby s***ing energy.
In order to counter static, a gate protect diode is built-in. The ***all SOT-23 package makes high density mounting possible.
XP151A13AOMR
Low On-State Resistance : ***(on) = 0.1Ω@ Vgs = 4.5V
: ***(on) = 0.14Ω@ Vgs = 2.5V
: ***(on) = 0.25Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
***all Package : SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
The products and product specificati*** contained herein are subject to change without
notice to improve performance characteristics. C***ult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no resp***ibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
XP151A13AOMR以***大程度的满足市场需求对电子器件品质的需求和对小型化、个性化的追求而采用的全新系列封装型号产品。作为TOREX系列的产品成员之一，为达到电子生产企业的个性化和共性的要求，在设计上突出个性化需求，在生产上采用标准的流程，极大的提高了生产工艺，满足更多企业对品质提高的需求。泰德兰作为XC61CN2402MR在内地的一级代理，为XC61CN2402MR在各大行业和电子生产企业的应用起到了重要的作用，不仅在库存上满足了从多企业的需求，同时在货期和产品研发上，也起到了非常大的作用
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