DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applicati***.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
供应MITSUBISH射频管RD06HVF1原装***大量库存 以上信息来自深圳市润百信科技有限公司