RA60H1317M1A

Silicon RF Power Modules

DESCRIPTION

The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes ***ailable at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD?0 @ VDD=12.5V, VGG=0V)

• Pout>60W, ?T>45% @ VDD=12.5V, VGG=5V, Pin=50mW

• Broadband Frequency Range: 136-174MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 67 x 19.4 x 9.9 mm

RoHS COMPLIANCE

• RA60H1317M1A-201 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts

However ,it is applicable to the following excepti*** of RoHS Directi***. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.

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