NXP Semiconductors - BLF245,112
Trans RF MOSFET N-CH 65V 6A 4-Pin SOT-123A Blister
Part Details:
- Manufacturer: NXP Semiconductors
- Part No: BLF245,112
Part Specificati***:
| Application | VHF |
| Channel Type | N |
| Channel Mode | Enhancement |
| Continuous Drain Current | 6A |
| Drain Source Voltage (Max) | 65V |
| Output Power (Max) | 30W |
| Power Gain (Typ)@Vds | 15.5@28V/12@12.5VdB |
| Noise Figure (Max) | 2(Typ)dB |
| Frequency (Max) | 175MHz |
| Package Type | SOT-123A |
| Pin Count | 4 |
| Forward Transconductance (Typ) | 1.9S |
| Drain Source Resistance (Max) | 750@10Vmohm |
| Input Capacitance (Typ)@Vds | 125@28VpF |
| Output Capacitance (Typ)@Vds | 75@28VpF |
| Reverse Capacitance (Typ) | 7@28VpF |
| Operating Temp Range | -65C to 200C |
| Packaging | Blister |
| Drain Efficiency (Typ) | 67% |
| Mounting | Screw |
| Mode Of Operation | CW Class-B |
| Number of Elements | 1 |
| Power Dissipation (Max) | 68000mW |
| VSWR (Max) | 50 |
| Screening Level | Military |
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