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深圳阳莱特电子有限公司经营各类主动元件和被动元件(电容,电阻,电感等)及机电元件(连接器,开关器件)等,以降低成本提供全方位的一站式电子元件供应链解决方案,包括:原厂授权分销代理长期订单、紧缺元件三天交货供应方案、多余物料转卖以及库存优化、物料清单配套及小批量供应等一系列解决方案。特色服务紧缺元件三......

RA13H4452M 三菱射频功率放大模块

产品编号:6450444                    更新时间:2015-09-21
价格: ¥165.00
深圳阳莱特电子有限公司

深圳阳莱特电子有限公司

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RA13H4452M 三菱射频功率放大模块

DESCRIPTION

The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a ***all leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes ***ailable at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V)

• Pout>13W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

• Broadband Frequency Range: 440-520MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

 

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