The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed
switching characteristics.(XP162A12A6PR)
Because high-speed switching is possible, the IC can be efficiently set thereby s***ing energy.
(XP162A12A6PR)
A gate protect diode is built-in to prevent static damage.
■APPLICATI***
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : ***(on) = 0.17Ω@ Vgs = -4.5V
: ***(on) = 0.3Ω@ Vgs = -2.5V
Ultra High-Speed Switching
Dribing Voltage : -2.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
***all Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
*联系：0755-83322522
*公司：深圳市泰德兰电子有限公司(TOREX一级代理)
*邮箱：wj@
*网址：www.sz800-ic.com
*地址:深圳市福田区华强北路1019号华强广场A座14楼A室
注：该系列产品各型号均有供货，欢迎在线咨询或直接来电。