Features:
Processed to OPTEK’s military screening program, patterned after MIL-PRF-19500
Miniature hermetically sealed “pill” package
Twice the power output of GaAs at same drive current
“S” level screening ***ailable
Mechanically and spectrally matched to OP600 phototransistors
Description:
Each OP223 (TX) and OP224 (S, TX, TXV) device is an 890 nm high reliability gallium aluminum arsenide infrared emitting
diode that is mounted in a miniature hermetically sealed “pill” type package which can be directly mounted to PCBoa***.
The gallium aluminum arsenide feature provides twice the radiated output of gallium arsenide at the same forward current.
After electrical testing by manufacturing, devices are processed to OPTEK’s 100 percent screening program, which is
patterned after MIL-PRF-19500. With a w***elength centered at 890 nm, the OP223 (TXV) and OP224 (S, TX, TXV).