Features:
Focused and non‐focused opcal light paern
Enhanced temperature range
TO‐46 hermecally sealed package
Mechanically and spectrally matched to other Optek devices
Choice of power ranges
Choice of narrow or wide irradiance paern
Descripon:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared eming diode, mounted in a hermec metal TO‐
46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same
forward current.
Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power
points. The 890 nm w***elength closely matches the spectral resp***e of silicon phototransistors, while the narrow beam
angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt
applica*** in conjuncon with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally
matched to OP800, OP593 and OP598 phototransistors.
Each OP231W, OP232W, OP233W, OP234W and OP235W device is lensed to provide a wide beam angle (50°) between half
power points. The 890 nm w***elength closely matches the spectral resp***e of silicon photo‐ ransistors, while the wide
beam angle provides relavely even illuminaon over a large area. The OP231W is mechanically and spectrally matched to
the OP800WSL and OP830SL series devices.
Please refer to Applicaon Bullens 208 and 210 for addional design informaon and reliability (degradaon) data.