CMPA601C025F
射频放大器 6.0-12.0GHz 25Watt GaN Flange 工厂包装数量50 GAN产品 常出型号 工厂常备库存。工程师们可以放心选择。如需了解价格货期
请随时联系国宇航芯黄小姐136362767652
Wolfspeed/Cree X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices.
Cree GaN components are ***aller and h***e a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth. The amplifiers therefore exhibit good input and output matching.
X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Tr***eling W***e Tubes. This is due to the significant advantages of GaN HEMTs and MMICs.
wolfspeed CREE X波段GaN HEMT器件和MMIC /宽能隙增大五倍，功率密度为10的一个因素20与GaAs基器件相比，击穿场强。
克里甘分量较小，对于相同的运行功率低电容。这意味着放大器可以在更宽的带宽上工作.。因此，放大器表现出良好的输入和输出匹配。
X波段功率放大器远离低效的GaAs PHEMT的和不可靠的行波管。这是由于GaN HEMT和MMIC的显著优势。
Applicati***
· 2-Way Private Radio
· Broadband Amplifiers
· Cellular Infrastructure
· Test Instrumentation
· Class A, AB, Linear Amplifiers Suitable for OFDM, W-CDMA, EDGE, CDMA W***eforms
· Satellite Communicati***
· PTP Communicati*** Links
· Marine Radar
· Pleasure Craft Radar
· Port Vessel Traffic Services
· High Efficiency Amplifiers
CMPA601C025F
射频放大器 6.0-12.0GHz 25Watt GaN Flange 工厂包装数量50 GAN产品 常出型号 工厂常备库存。工程师们可以放心选择。如需了解价格货期
请随时联系国宇航芯黄小姐136362767652
Wolfspeed/Cree X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices.
Cree GaN components are ***aller and h***e a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth. The amplifiers therefore exhibit good input and output matching.
X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Tr***eling W***e Tubes. This is due to the significant advantages of GaN HEMTs and MMICs.
wolfspeed CREE X波段GaN HEMT器件和MMIC /宽能隙增大五倍，功率密度为10的一个因素20与GaAs基器件相比，击穿场强。
克里甘分量较小，对于相同的运行功率低电容。这意味着放大器可以在更宽的带宽上工作.。因此，放大器表现出良好的输入和输出匹配。
X波段功率放大器远离低效的GaAs PHEMT的和不可靠的行波管。这是由于GaN HEMT和MMIC的显著优势。
Applicati***
· 2-Way Private Radio
· Broadband Amplifiers
· Cellular Infrastructure
· Test Instrumentation
· Class A, AB, Linear Amplifiers Suitable for OFDM, W-CDMA, EDGE, CDMA W***eforms
· Satellite Communicati***
· PTP Communicati*** Links
· Marine Radar
· Pleasure Craft Radar
· Port Vessel Traffic Services
· High Efficiency Amplifiers
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