MJD31C TO-252

    TO-25 2-2L  Plastic-Encapsulate Transistors
                                                             
   
   MJD31C     TRANSISTOR (NPN)
 FEATURES 
z  Designed for  G eneral P urpose Amplifier and L ow Speed S witching  Applicati***.
z  Lead Formed for Surface Mount Applicati*** in Plastic Sleeves (No Suffix)
z  Straight Lead Version in Plastic Sleeves (“–1” Suffix)
z  Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
z  Electrically Similar to Popular TIP31 and TIP32 Series   
 
 
MAXIMUM RATINGS (Ta=25 ℃  unless otherwise noted)  
Symbol             Parameter                                        Max             Unit 
VCBO  Collector-Base Voltage  100  V
VCEO  Collector-Emitter Voltage  100  V
VEBO
  Emitter-Base Voltage  5  V
I C  Collector Current -Continuous  3  A
PC  Collector Power Dissipation  1.25  W
T J
  Junction Temperature  150  ℃
T stg
  Storage Temperature  -65-150  ℃
 
ELECTRICAL  CHARACTERISTICS (Ta=25 ℃  unless otherwise specified)                                         
             Parameter  Symbol  Test   conditi***  Min     Max   Unit
Collector-base breakdown voltage     V(BR)CBO
 IC= 1mA, I E
=0 100   V
Collector-emitter breakdown voltage *    VCEO(sus)
 IC= 30mA, IB
=0 100  V
Emitter-base breakdown voltage  V(BR)EBO
 IE
= 1mA, I C=0 5    V
Collector cut-off current                I
CES  VCE=100V, VEB
=0   20 μA
Collector cut-off current             
I CEO
VCE= 60V, IB
= 0    50  μA
Emitter cut-off current  I EBO VEB
=5V, IC=0   1  mA
hFE(1) VCE= 4V, I C= 1A  25    
DC current gain
hFE(2) VCE=4 V, I C= 3A  15  75  
Collector-emitter saturation voltage  VCE(sat) IC=3A, I B
=0.375A  1.2 V
Base-emitter voltage  VBE(on) VCE= 4V, I C=3A   1.8  V
Transition frequency  f
T  VCE=10V , IC=0.5A,fT=1KHz 3    M